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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1225 DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators. PINNING PIN 1 2 3 Base DESCRIPTION Collector Emitter PARAMETER Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak SEM GE Open base OND IC TOR UC VALUE -70 -60 -6 -10 -15 CONDITIONS UNIT V V V A A Open emitter Open collector TC=25ae PC Collector dissipation 30 W 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1225 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE= IC=-5A ; IB=-10mA IC=-5A ; IB=-10mA VCB=-40V;IE=0 VEB=-5V;IC=0 IC=-5A ; VCE=-2V 2000 5000 MIN -70 -60 -1.0 -1.5 -2.0 -0.1 -3.0 TYP. MAX UNIT V V V V mA mA SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Switching times ton ts tf Turn-on time Storage time Fall time HAN INC SEM GE IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4| OND IC TOR UC 0.5 |I 1.5 1.7 |I s |I s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1225 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
Price & Availability of 2SB1225 |
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