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 Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1225
DESCRIPTION With TO-220F package Complement to type 2SD1827 High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Suitable for use in control of motor drivers, printer hammer drivers, relay drivers, and constant-voltage regulators.
PINNING PIN 1 2 3 Base DESCRIPTION
Collector
Emitter

PARAMETER
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM
HAN INC
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak
SEM GE
Open base
OND IC
TOR UC
VALUE -70 -60 -6 -10 -15
CONDITIONS
UNIT V V V A A
Open emitter
Open collector
TC=25ae PC Collector dissipation
30 W 2
Tj Tstg
Junction temperature Storage temperature
150 -55~150 ae
ae
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1225
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE= IC=-5A ; IB=-10mA IC=-5A ; IB=-10mA VCB=-40V;IE=0 VEB=-5V;IC=0 IC=-5A ; VCE=-2V 2000 5000 MIN -70 -60 -1.0 -1.5 -2.0 -0.1 -3.0 TYP. MAX UNIT V V V V mA mA
SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE
Switching times ton ts tf
Turn-on time Storage time

Fall time
HAN INC
SEM GE
IC=5A; IB1=0.01A -IB2=0.01A VCC=20V ,RL=4|
OND IC
TOR UC
0.5 |I 1.5 1.7 |I
s |I s s
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1225
SEM GE
HAN INC
OND IC
TOR UC
Fig.2 Outline dimensions
3


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